DMNH4015SSD-13
manufacturer:
Diodes Incorporated
Description:
MOSFET 2 N-CHANNEL 11A 8SO
Category:
Semiconductors
Specifications
Supplier Device Package ::
8-SO
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
2500
Input Capacitance (Ciss) (Max) @ Vds ::
1938pF @ 15V
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
11A (Ta)
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Type ::
2 N-Channel (Dual)
FET Feature ::
Standard
Drain To Source Voltage (Vdss) ::
-
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
15nC @ 4.5V
Rds On (Max) @ Id, Vgs ::
15 MOhm @ 12A, 10V
Power - Max ::
-
Vgs(th) (Max) @ Id ::
3V @ 250µA
Series ::
-
Manufacturer ::
Diodes Incorporated
Introduction
The DMNH4015SSD-13,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
ZXMP3A16DN8TA
MOSFET Dl 30V P-Chnl UMOS
BSS127S-7
MOSFET N-CH 600V 0.05A SOT23
DMT6009LFG-7
MOSFET 60V N-Ch Enh FET Low Rdson
DMP6023LSS-13
MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
DMN61D8LVT-13
MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
DMC1229UFDB-13
MOSFET N/P-CH 12V U-DFN2020-6
DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E
DMN2400UFDQ-7
MOSFET 20V N-Ch Enh FET VL Gate 1.0V
| Image | Part # | Description | |
|---|---|---|---|
|
|
ZXMP3A16DN8TA |
MOSFET Dl 30V P-Chnl UMOS
|
|
|
|
BSS127S-7 |
MOSFET N-CH 600V 0.05A SOT23
|
|
|
|
DMT6009LFG-7 |
MOSFET 60V N-Ch Enh FET Low Rdson
|
|
|
|
DMP6023LSS-13 |
MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
|
|
|
|
DMN61D8LVT-13 |
MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
|
|
|
|
DMC1229UFDB-13 |
MOSFET N/P-CH 12V U-DFN2020-6
|
|
|
|
DMN1019UFDE-7 |
MOSFET N CH 12V 11A U-DFN2020-6E
|
|
|
|
DMN2400UFDQ-7 |
MOSFET 20V N-Ch Enh FET VL Gate 1.0V
|
Send RFQ
Stock:
MOQ: