DMN2400UFDQ-7
manufacturer:
Diodes Incorporated
Description:
MOSFET 20V N-Ch Enh FET VL Gate 1.0V
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
900 MA
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
U-DFN1212-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
20 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
450 MV
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
350 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
12 V
Qg - Gate Charge ::
500 PC
Manufacturer ::
Diodes Incorporated
Introduction
The DMN2400UFDQ-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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ZXMP3A16DN8TA |
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DMN61D8LVT-13 |
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DMC1229UFDB-13 |
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DMN1019UFDE-7 |
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