MIEB101H1200EH
manufacturer:
IXYS
Description:
IGBT MODULE 1200V 183A 630W E3
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
183 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Box
Series:
-
Package / Case:
E3
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
E3
Mfr:
IXYS
Operating Temperature:
-40°C ~ 125°C (TJ)
Current - Collector Cutoff (Max):
300 µA
IGBT Type:
-
Power - Max:
630 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
7.43 NF @ 25 V
Configuration:
Full Bridge Inverter
NTC Thermistor:
No
Base Product Number:
MIEB101
Introduction
IGBT Module Full Bridge Inverter 1200 V 183 A 630 W Chassis Mount E3
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IXGN200N60A |
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IXDN75N120 |
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