ULN2803APG,CN
manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS 8NPN DARL 50V 0.5A 18DIP
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
500mA
Product Status:
Obsolete
Transistor Type:
8 NPN Darlington
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Tube
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
18-DIP
Mfr:
Toshiba Semiconductor And Storage
Current - Collector Cutoff (Max):
-
Power - Max:
1.47W
Package / Case:
18-DIP (0.300", 7.62mm)
Operating Temperature:
-40°C ~ 85°C (TA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
Base Product Number:
ULN2803
Introduction
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
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