MT3S111TU,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
RF SIGE NPN BIPOLAR TRANSISTOR N
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
10GHz
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Voltage - Collector Emitter Breakdown (Max):
6V
Supplier Device Package:
UFM
Mfr:
Toshiba Semiconductor And Storage
Noise Figure (dB Typ @ F):
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Power - Max:
800mW
Gain:
12.5dB
Package / Case:
3-SMD, Flat Lead
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 30mA, 5V
Base Product Number:
MT3S111
Introduction
RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
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