NTE55MCP
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
8A
Product Status:
Active
Transistor Type:
PNP
Mounting Type:
Through Hole
Frequency - Transition:
30MHz
Package:
Bag
Series:
-
Voltage - Collector Emitter Breakdown (Max):
150V
Supplier Device Package:
TO-220
Mfr:
NTE Electronics, Inc
Noise Figure (dB Typ @ F):
-
Power - Max:
2W
Gain:
-
Package / Case:
TO-220-3
Operating Temperature:
-65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 2A, 2V
Introduction
RF Transistor PNP 150V 8A 30MHz 2W Through Hole TO-220
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RF TRANS PNP 150V 30MHZ TO220

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Image | Part # | Description | |
---|---|---|---|
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NTE55 |
RF TRANS PNP 150V 30MHZ TO220
|
|
![]() |
MMBT918 |
RF TRANS NPN 15V 600MHZ SOT23-3
|
|
![]() |
NTE65 |
RF TRANS NPN 15V 5GHZ 3SMD
|
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