NSVMMBTH10LT1G
Specifications
Voltage - Collector Emitter Breakdown (Max) ::
25V
Product Category ::
RF Bipolar Transistors
Gain ::
-
Factory Stock ::
42000
Transistor Type ::
NPN
Minimum Quantity ::
3000
Supplier Device Package ::
SOT-23
Noise Figure (dB Typ @ F) ::
-
Part Status ::
Active
Current - Collector (Ic) (Max) ::
-
Power - Max ::
225mW
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Frequency - Transition ::
650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce ::
60 @ 4mA, 10V
Operating Temperature ::
-55°C ~ 150°C (TJ)
Package / Case ::
TO-236-3, SC-59, SOT-23-3
Mounting Type ::
Surface Mount
Series ::
-
Manufacturer ::
Onsemi
Introduction
The NSVMMBTH10LT1G,from onsemi,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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