NGTB25N120SWG
manufacturer:
onsemi
Description:
IGBT Transistors FSII 25A 1200V Welding
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
50 A
Pd - Power Dissipation ::
385 W
Collector- Emitter Voltage VCEO Max ::
1.2 KV
Package / Case ::
TO-247-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2 V
Manufacturer ::
Onsemi
Introduction
The NGTB25N120SWG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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