IRF7464TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 1.2A 8-SOIC
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±30V
Current - Continuous Drain (Id) @ 25°C ::
1.2A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
14nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
4000
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds ::
280pF @ 25V
Supplier Device Package ::
8-SO
Part Status ::
Obsolete
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
730 MOhm @ 720mA, 10V
Power Dissipation (Max) ::
2.5W (Ta)
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
5.5V @ 250µA
Drain To Source Voltage (Vdss) ::
200V
Introduction
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