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IPW60R099P6XKSA1

manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 600V TO247-3
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
37.9A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
70nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
CoolMOS™ P6
Input Capacitance (Ciss) (Max) @ Vds ::
3330pF @ 100V
Supplier Device Package ::
PG-TO247-3
Part Status ::
Active
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
99 MOhm @ 14.5A, 10V
Power Dissipation (Max) ::
278W (Tc)
Package / Case ::
TO-247-3
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4.5V @ 1.21mA
Drain To Source Voltage (Vdss) ::
600V
Introduction
The IPW60R099P6XKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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