SQJ850EP-T1_GE3
manufacturer:
Vishay Semiconductors
Description:
MOSFET 60V 24A 45W AEC-Q101 Qualified
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
24 A
Mounting Style ::
SMD/SMT
Tradename ::
TrenchFET
Minimum Operating Temperature ::
- 55 C
Package / Case ::
PowerPAK-SO-8L-4
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
60 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
1.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
0.019 Ohms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V
Qg - Gate Charge ::
30 NC
Manufacturer ::
Vishay Semiconductors
Introduction
The SQJ850EP-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SUD50N06-09L-E3 |
MOSFET 60V 50A 136W 9.3mohm @ 10V
|
|
|
|
SIHF23N60E-GE3 |
MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS
|
|
|
|
SIS472DN-T1-GE3 |
MOSFET 30 Volts 20 Amps 28 Watts
|
|
|
|
SIS892ADN-T1-GE3 |
MOSFET 100V 33mOhm@10V 28A N-Ch MV T-FET
|
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