BSP135 E6327
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 600V 120MA SOT-223
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
120mA (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
4.9nC @ 5V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1000
Drive Voltage (Max Rds On, Min Rds On) ::
0V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
Depletion Mode
Series ::
SIPMOS®
Input Capacitance (Ciss) (Max) @ Vds ::
146pF @ 25V
Supplier Device Package ::
PG-SOT223-4
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
45 Ohm @ 120mA, 10V
Power Dissipation (Max) ::
1.8W (Ta)
Package / Case ::
TO-261-4, TO-261AA
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
1V @ 94µA
Drain To Source Voltage (Vdss) ::
600V
Introduction
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